共 49 条
Energetics and electronic structures of single walled carbon nanotubes encapsulated in boron nitride nanotubes
被引:9
作者:

Hisama, Kaoru
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Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan

Chiashi, Shohei
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Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan

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Okada, Susumu
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Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan
机构:
[1] Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan
[2] Natl Inst Adv Ind Sci & Technol, Energy NanoEngn Lab, Tsukuba, Ibaraki 3058564, Japan
[3] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan
关键词:
GRAPHENE NANORIBBONS;
C-60;
BAND;
D O I:
10.7567/1882-0786/ab5c02
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Using the density functional theory, energetics and electronic structures of single walled carbon nanotube (CNT) encapsulated in boron nitride nanotube (BNNT) are investigated. Cohesive energy of CNT inside BNNT depends on the spacing between them and on their mutual arrangement. Band gap of CNT encapsulated in BNNT is modulated by about tens of meV, when they have AB stacking arrangement where B atoms are located as close as to C atoms, indicating that BNNTeffectively affects the tensile strain onto CNT. Carrier accumulation into CNToccurs under external electric field, where BNNT acts as the gate insulator surrounding CNT. (C) 2019 The Japan Society of Applied Physics.
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