Dynamic transition in etching with poisoning

被引:18
作者
Reis, FDAA [1 ]
机构
[1] Univ Fed Fluminense, Inst Fis, BR-24210340 Niteroi, RJ, Brazil
来源
PHYSICAL REVIEW E | 2003年 / 68卷 / 04期
关键词
D O I
10.1103/PhysRevE.68.041602
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
We study a lattice model for etching of a crystalline solid including the deposition of a poisoning species. The model considers normal and lateral erosion of the columns of the solid by a flux of etching particles and the blocking effects of impurities formed at the surface. As the probability p of formation of this poisoning species increases, the etching rate decreases and a continuous transition to a pinned phase is observed. The transition is in the directed percolation (DP) class, with the fraction of the exposed columns as the order parameter. This interpretation is consistent with a mapping of the interface problem in d+1 dimensions onto a d-dimensional contact process, and is confirmed by numerical results in d=1 and d=2. In the etching phase, the interface width scales with Kardar-Parisi-Zhang (KPZ) exponents, and shows a crossover from the critical DP behavior (Wsimilar tot) to KPZ near the critical point, at etching times of the order of (p(c)-p)(-nu)(parallel to). Anomalous roughening is observed at criticality, with the roughness exponent related to DP exponents as alpha(c)=nu(parallel to)/nu(perpendicular to)>1. The main differences from previously studied DP transitions in growth models and isotropic percolation transitions in etching models are discussed. Investigations in real systems are suggested.
引用
收藏
页码:416021 / 416027
页数:7
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