Recombination processes in InxGa1-xN light-emitting diodes studied through optically detected magnetic resonance

被引：13
作者：
Glaser, ER [1 ]
Kennedy, TA
Carlos, WE
Ruden, PP
Nakamura, S
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA
[3] Nichia Chem Ind Ltd, Tokushima 774, Japan
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 21期
关键词：
D O I：
10.1063/1.122693
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optically detected magnetic resonance (ODMR) has been observed on photoluminescence from InGaN light-emitting diodes (LEDs) under low photoexcitation conditions. The samples have the usual p-i-n structure but without etching or metallizations. Distinct ODMR features from the recombining electron and hole are found with strength that indicates significant charge separation and long lifetimes (>100 ns). The electron and hole g tensors are determined for green and extra-blue LEDs. The recombination is assigned to electrons in the InGaN quantum well (QW) and holes either bound at Mg acceptors outside the well or localized at potential minima in the QW but spatially separated from the electrons. (C) 1998 American Institute of Physics. [S0003-6951(98)04347-2].
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页码：3123 / 3125
页数：3
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