Low-Voltage Mach-Zehnder Modulator with InGaAs/InAlAs Five-Layer Asymmetric Coupled Quantum Well

被引：15

作者：

Arakawa, Taro ^{[1
]}

Hariki, Takehiro ^{[1
]}

Amma, Yoshimichi ^{[1
]}

Fukuoka, Masayasu ^{[1
]}

Ushigome, Motoki ^{[1
]}

Tada, Kunio ^{[2
]}

机构：

[1] Yokohama Natl Univ, Grad Sch Engn, Yokohama, Kanagawa 2408501, Japan

[2] Kanazawa Inst Technol, Grad Sch Engn, Minato Ku, Tokyo 1050002, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 04期

关键词：

INP DQPSK MODULATOR; BAND-STRUCTURE; PHASE;

D O I：

10.1143/JJAP.51.042203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated a low-voltage Mach-Zehnder (MZ) modulator with a multiple InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) for 1.55 mu m wavelength. The FACQW is expected to exhibit a large electrorefractive index change owing to its unique behavior of the quantum-confined Stark effect. The MZ modulator with ridge waveguides was fabricated by molecular beam epitaxy and wet etching. The product of a half-wave voltage and a phase shifter length (V pi L) was as low as 1.2V.mm in DC modulation. In addition, we discussed the degradation of the electrorefractive index change due to the nonuniformity of an electric field in the core layer and proposed a novel combined multiple FACQW structure to prevent the degradation. (C) 2012 The Japan Society of Applied Physics

引用

页数：6

共 25 条

[1] InP-Based Mach-Zehnder modulator with capacitively loaded traveling-wave electrodes [J].