A novel high-Q and wide-frequency-range inductor using Si 3-D MMIC technology

被引：17
作者：
Kamogawa, K [1 ]
Nishikawa, K [1 ]
Toyoda, I [1 ]
Tokumitsu, T [1 ]
Tanaka, M [1 ]
机构：
[1] NTT, Wireless Syst Labs, Kanagawa 2390847, Japan
来源：
IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1999年 / 9卷 / 01期
关键词：
inductors; lumped-element microwave circuits; MMIC; silicon materials/devices; three-dimensional;
D O I：
10.1109/75.752110
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel high-Q and wide-frequency-range inductor formed using three-dimensional (3-D) monolithic microwave integrated circuit (MMIC) technology on a conductive Si substrate is presented. A fabricated 1.24-nH spiral inductor achieves the very high resonant frequency of 29.3 GHz and maximum quality factor(Q) of 45.77 owing to thick dielectric layers and a ground plane that overlays the substrate. The measured results show that the Si 3-D MMIC is very suitable for realizing single-chip and mixed-mode transceivers for L-band to Ku-band applications.
引用
收藏
页码：16 / 18
页数：3
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