Leakage current mechanisms in epitaxial Gd2O3 high-k gate dielectrics

被引：8

作者：

Gottlob, H. D. B. ^{[1
]}

Echtermeyer, T. J. ^{[1
]}

Schmidt, M. ^{[1
]}

Mollenhauer, T. ^{[1
]}

Wahlbrink, T. ^{[1
]}

Lemme, M. C. ^{[1
]}

Kurz, H. ^{[1
]}

机构：

[1] AMO GmbH, Adv Microelect Ctr Aachen, D-52074 Aachen, Germany

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 03期

关键词：

19;

D O I：

10.1149/1.2828201

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report on leakage current mechanisms in epitaxial gadolinium oxide (Gd2O3) high-k gate dielectrics suitable for low standby power logic applications. The investigated p-type metal-oxide-semi con doctor capacitors are gated with complementary-metal-oxide-semiconductor-compatible fully silicided nickel silicide electrodes. The Gd2O3 thickness is 5.9 nm corresponding to a capacitance equivalent oxide thickness of 1.8 nm. Poole-Frenkel conduction is identified as the main leakage mechanism with the high-frequency permittivity describing the dielectric response on the carriers. A trap level of Phi(T) = 1.2 eV is extracted. The resulting band diagram strongly suggests hole conduction to be dominant over electron conduction. (c) 2008 The Electrochemical Society.

引用

页码：G12 / G14

页数：3

共 18 条

[1]

Cabral C, 2004, 2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P184

[2] Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si(001) [J].

Czernohorsky, M ;

Bugiel, E ;

Osten, HJ ;

Fissel, A ;

Kirfel, O .

APPLIED PHYSICS LETTERS, 2006, 88 (15)

[3] Navigation aids in the search for future high-k dielectrics:: Physical and electrical trends [J].

Engstrom, O. ;

Raeissi, B. ;

Hall, S. ;

Buiu, O. ;

Lemme, M. C. ;

Gottlob, H. D. B. ;

Hurley, P. K. ;

Cherkaoui, K. .

SOLID-STATE ELECTRONICS, 2007, 51 (04) :622-626

[4] Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide [J].

Fissel, A. ;

Czernohorsky, M. ;

Osten, H. J. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (04) :2115-2118

[5] CMOS integration of epitaxial Gd2O3 high-k gate dielectrics [J].

Gottlob, H. D. B. ;

Echtermeyer, T. ;

Mollenhauer, T. ;

Efavi, J. K. ;

Schmidt, M. ;

Wahlbrink, T. ;

Lemme, M. C. ;

Kurz, H. ;

Czernohorsky, M. ;

Bugiel, E. ;

Osten, H. -J ;

Fissel, A. .

SOLID-STATE ELECTRONICS, 2006, 50 (06) :979-985

[6] 0.86-nm CET gate stacks with epitaxial Gd2O3 high-k dielectrics and FUSINiSi metal electrodes [J].

Gottlob, H. D. B. ;

Echtermeyer, T. ;

Schmidt, M. ;

Mollenhauer, T. ;

Efavi, J. K. ;

Wahlbrink, T. ;

Lemme, M. C. ;

Czernohorsky, M. ;

Bugiel, E. ;

Fissel, A. ;

Osten, H. J. ;

Kurz, H. .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (10) :814-816

[7] Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer [J].

Hattori, T ;

Yoshida, T ;

Shiraishi, T ;

Takahashi, K ;

Nohira, H ;

Joumori, S ;

Nakajima, K ;

Suzuki, M ;

Kimura, K ;

Kashiwagi, I ;

Ohshima, C ;

Ohmi, S ;

Iwai, H .

MICROELECTRONIC ENGINEERING, 2004, 72 (1-4) :283-287

[8]

HOUSSA M, 2004, GATE DIELECTRICS, P597

[9] Tunneling-assisted Poole-Frenkel conduction mechanism in HfO2 thin films -: art. no. 113701 [J].

Jeong, DS ;

Hwang, CS .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (11)

[10] Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si [J].

Kwo, J ;

Hong, M ;

Kortan, AR ;

Queeney, KL ;

Chabal, YJ ;

Opila, RL ;

Muller, DA ;

Chu, SNG ;

Sapjeta, BJ ;

Lay, TS ;

Mannaerts, JP ;

Boone, T ;

Krautter, HW ;

Krajewski, JJ ;

Sergnt, AM ;

Rosamilia, JM .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (07) :3920-3927

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