Shallow traps and radiative recombination processes in Lu3Al5O12:Ce single crystal scintillator

被引：183

作者：

Nikl, M. ^{[1
]}

Vedda, A. ^{[1
]}

Fasoli, M. ^{[1
]}

Fontana, I. ^{[1
]}

Laguta, V. V. ^{[2
]}

Mihokova, E. ^{[2
]}

Pejchal, J. ^{[2
]}

Rosa, J. ^{[2
]}

Nejezchleb, K. ^{[3
]}

机构：

[1] Univ Milan, Dipartimento Sci Mat, I-20125 Milan, Italy

[2] Inst Phys AS CR, Prague 16253, Czech Republic

[3] CRYTUR Ltd, Turnov, Czech Republic

来源：

PHYSICAL REVIEW B | 2007年 / 76卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.76.195121

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermally stimulated luminescence (TSL) glow curves and emission spectra were studied in undoped and Ce-doped Lu3Al5O12 single crystals by wavelength resolved TSL measurements in the 10-310 K temperature range. Isothermal phosphorescence measurements in the 10-100 K range were also performed, which point to the existence of a tunneling-driven radiative recombination process. These processes can explain the presence and time-dependence of the submicrosecond slow decay component in the scintillation decay. Electron paramagnetic resonance experiments suggest the presence of Lu-Al defects in the vicinity of Ce3+ ions, which are the most probable electron and hole traps participating in the tunneling-driven radiative recombination process.

引用

页数：8

共 36 条

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