Heat transfer modeling of a new crystal growth process

被引：0

作者：

Baillet, F

Chaussende, D

Charpentier, L

Pernot, E

Pons, M

Madar, R

机构：

[1] NOVASiC, Savoie Technolac, FR-73375 Le Bourget Du Lac, France

[2] ENSPG, Mat & Genie Phys Lab, UMR 5628, FR-38402 St Martin Dheres, France

[3] ENSEEG, Thermodynam & Physicochim Met Lab, FR-38402 St Martin Dheres, France

来源：

SILICON CARBIDE AND RELATED MATERIALS - 2002 | 2002年 / 433-4卷

关键词：

bulk growth; heat transfer; modeling; silicon carbide;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Modeling and simulation were used to evaluate a new reactor concept for SiC bulk growth. In this reactor, we succeed to fulfill thermal conditions for CVD deposition from tetramethylsilane dilute in argon and subsequent sublimation and condensation on a seed. Heat transfer modeling allowed to visualize the influence of gas flow in the reactor and temperature distribution on the seed and in the SiC deposition area. The results have been compared with experimental results.

引用

页码：103 / 106

页数：4