Spectral interferometry and reflectometry used to measure thin films

A new method for a precise measurement of the oscillatory part of phase change on reflection (interferometric phase) from a thin-film structure is presented. The method, which is based on phase retrieval from the spectral interferograms recorded at the output of a slightly dispersive Michelson interferometer, is combined with reflectometry. The interferometric phase of the thin-film structure is measured precisely using a reference sample of known phase change on reflection. The spectral reflectance of the thin-film structure is also measured in the interferometer. The feasibility of the method is confirmed in processing the experimental data for SiO2 thin film on a silicon wafer of known optical constants. Four samples of the thin film are used and their thicknesses are determined. We confirm very good agreement between the thicknesses obtained from the interferometric phase and reflectance measurements.