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Half-Heusler Semiconductors as Piezoelectrics
被引:194
|作者:
Roy, Anindya
[1
]
Bennett, Joseph W.
[1
]
Rabe, Karin M.
[1
]
Vanderbilt, David
[1
]
机构:
[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
关键词:
FUNCTIONAL PERTURBATION-THEORY;
CRYSTAL-STRUCTURE;
PSEUDOPOTENTIALS;
1ST-PRINCIPLES;
D O I:
10.1103/PhysRevLett.109.037602
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
We use a first-principles rational-design approach to demonstrate the potential of semiconducting half-Heusler compounds as a previously unrecognized class of piezoelectric materials. We perform a high-throughput scan of a large number of compounds, testing for insulating character and calculating structural, dielectric, and piezoelectric properties. Our results provide guidance for the experimental realization and characterization of high-performance materials in this class that may be suitable for practical applications.
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