Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type δ-doping

被引：40

作者：

Bayram, C. ^{[1
]}

Pau, J. L. ^{[1
]}

McClintock, R. ^{[1
]}

Razeghi, M. ^{[1
]}

机构：

[1] Northwestern Univ, Ctr Quantum Devices, Dept Elect Engn & Comp Sci, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 24期

关键词：

D O I：

10.1063/1.2948857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality delta-doped p-GaN is used as a means of improving the performance of back-illuminated GaN avalanche photodiodes (APDs). Devices with delta-doped p-GaN show consistently lower leakage current and lower breakdown voltage than those with bulk p-GaN. APDs with delta-doped p-GaN also achieve a maximum multiplication gain of 5.1x10(4), more than 50 times higher than that obtained in devices with bulk p-GaN. The better device performance of APDs with delta-doped p-GaN is attributed to the higher structural quality of the p-GaN layer achieved via delta-doping.

引用

页数：3

共 14 条

[1] Recent advances in avalanche photodiodes [J].

Campbell, JC ;

Demiguel, S ;

Ma, F ;

Beck, A ;

Guo, XY ;

Wang, SL ;

Zheng, XG ;

Li, XW ;

Beck, JD ;

Kinch, MA ;

Huntington, A ;

Coldren, LA ;

Decobert, J ;

Tscherptner, N .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2004, 10 (04) :777-787

[2] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].

DEBYE, PP ;

CONWELL, EM .

PHYSICAL REVIEW, 1954, 93 (04) :693-706

[3] Hall-effect characterization of III-V nitride semiconductors for high efficiency light emitting diodes [J].

Götz, W ;

Kern, RS ;

Chen, CH ;

Liu, H ;

Steigerwald, DA ;

Fletcher, RM .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3) :211-217

[4] Hole conductivity and compensation in epitaxial GaN:Mg layers [J].

Kaufmann, U ;

Schlotter, P ;

Obloh, H ;

Köhler, K ;

Maier, M .

PHYSICAL REVIEW B, 2000, 62 (16) :10867-10872

[5] Heavy doping effects in Mg-doped GaN [J].

Kozodoy, P ;

Xing, HL ;

DenBaars, SP ;

Mishra, UK ;

Saxler, A ;

Perrin, R ;

Elhamri, S ;

Mitchel, WC .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (04) :1832-1835

[6] MOVPE growth and characterization of Mg-doped GaN [J].

Kozodoy, P ;

Keller, S ;

DenBaars, S ;

Mishra, UK .

JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :265-269

[7] Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes [J].

McClintock, R. ;

Pau, J. L. ;

Minder, K. ;

Bayram, C. ;

Kung, P. ;

Razeghi, M. .

APPLIED PHYSICS LETTERS, 2007, 90 (14)

[8] Scaling in back-illuminated GaN avalanche photodiodes [J].

Minder, K. ;

Pau, J. L. ;

McClintock, R. ;

Kung, P. ;

Bayram, C. ;

Razeghi, M. ;

Silversmith, D. .

APPLIED PHYSICS LETTERS, 2007, 91 (07)

[9] Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping [J].

Nakarmi, ML ;

Kim, KH ;

Li, J ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2003, 82 (18) :3041-3043

[10] Geiger-mode operation of back-illuminated GaN avalanche photodiodes [J].

Pau, J. L. ;

McClintock, R. ;

Minder, K. ;

Bayram, C. ;

Kung, P. ;

Razeghi, M. ;

Munoz, E. ;

Silversmith, D. .

APPLIED PHYSICS LETTERS, 2007, 91 (04)

← 1 2 →