Role of local structure in the phase change of Ge-Te films

被引:14
作者
Choi, Yong Gyu [1 ]
Kovalskiy, Andriy [2 ,3 ]
Cheong, Byung-Ki [4 ]
Jain, Himanshu [2 ]
机构
[1] Korea Aerosp Univ, Dept Mat Sci & Engn, Gyeonggi 412791, South Korea
[2] Lehigh Univ, Dept Mat Sci & Engn, Bethlehem, PA 18015 USA
[3] Austin Peay State Univ, Dept Phys & Astron, Clarksville, TN 37044 USA
[4] Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea
基金
美国国家科学基金会;
关键词
DATA-STORAGE; ORDER;
D O I
10.1016/j.cplett.2012.03.032
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The role of structure in the crystallization of GexTe100 (x) model system suitable for phase-change applications is established by determining the local environment of each constituent using EXAFS analysis. Across the compositional spectrum, both constituents satisfy the (8-N) rule in the amorphous state except that the Ge atoms are surrounded by similar to 3.4 neighbors in the stoichiometric composition. The estimation of homopolar Ge-Ge and Te-Te bonds indicates that chemical order is preserved less for Ge than for Te atoms. The crystallized stoichiometric film consists of Ge clusters in addition to GeTe crystals, implying that the latter has appreciable concentration of Ge vacancies. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:58 / 61
页数:4
相关论文
共 24 条
[1]   Structure of liquid phase change material AgInSbTe from density functional/molecular dynamics simulations [J].
Akola, J. ;
Jones, R. O. .
APPLIED PHYSICS LETTERS, 2009, 94 (25)
[2]   Nanosecond switching in GeTe phase change memory cells [J].
Bruns, G. ;
Merkelbach, P. ;
Schlockermann, C. ;
Salinga, M. ;
Wuttig, M. ;
Happ, T. D. ;
Philipp, J. B. ;
Kund, M. .
APPLIED PHYSICS LETTERS, 2009, 95 (04)
[3]   Phase change memory technology [J].
Burr, Geoffrey W. ;
Breitwisch, Matthew J. ;
Franceschini, Michele ;
Garetto, Davide ;
Gopalakrishnan, Kailash ;
Jackson, Bryan ;
Kurdi, Buelent ;
Lam, Chung ;
Lastras, Luis A. ;
Padilla, Alvaro ;
Rajendran, Bipin ;
Raoux, Simone ;
Shenoy, Rohit S. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (02) :223-262
[4]   COMPOUND MATERIALS FOR REVERSIBLE, PHASE-CHANGE OPTICAL-DATA STORAGE [J].
CHEN, M ;
RUBIN, KA ;
BARTON, RW .
APPLIED PHYSICS LETTERS, 1986, 49 (09) :502-504
[5]  
Choi Y.G., UNPUB
[6]   Evidence of Germanium precipitation in phase-change Ge1-xTex thin films by Raman scattering [J].
Gourvest, E. ;
Lhostis, S. ;
Kreisel, J. ;
Armand, M. ;
Maitrejean, S. ;
Roule, A. ;
Vallee, C. .
APPLIED PHYSICS LETTERS, 2009, 95 (03)
[7]   Electronic structures and local atomic configurations in amorphous GeSe and GeTe [J].
Hosokawa, S ;
Hari, Y ;
Kouchi, T ;
Ono, I ;
Sato, H ;
Taniguchi, M ;
Hiraya, A ;
Takata, Y ;
Kosugi, N ;
Watanabe, M .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1998, 10 (08) :1931-1950
[8]   An XPS study of the early stages of silver photodiffusion in Ag/a-As2S3 films [J].
Jain, Himanshu ;
Kovalskiy, Andriy ;
Miller, Alfred .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (6-7) :562-566
[9]   Local atomic environment in amorphous Ge15Te85 [J].
Jóvári, P ;
Kaban, I ;
Hoyer, W ;
Delaplane, RG ;
Wannberg, A .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2005, 17 (10) :1529-1536
[10]   Crystallization-induced short-range order changes in amorphous GeTe [J].
Kolobov, AV ;
Fons, P ;
Tominaga, J ;
Ankudinov, AL ;
Yannopoulos, SN ;
Andrikopoulos, KS .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (44) :S5103-S5108