Low temperature photo-oxidation of silicon using deep UV radiation

被引：21

作者：

Zhang, JY

Boyd, IW

机构：

[1] Electron. and Electrical Engineering, University College London, London WC1E 7JE, Torrington Place

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 22期

关键词：

oxidation; semiconductor devices; silicon;

D O I：

10.1049/el:19961377

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Direct photo-oxidation of silicon at a temperature of 250 degrees C has been investigated using vacuum ultraviolet radiation. The oxidation rate is more than three times greater than that obtained at 350 degrees C using a low pressure mercury lamp. Ellipsometry, Fourier transform infrared spectroscopy, capacitance-voltage and current-voltage measurements indicate these to be high quality layers.

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页码：2097 / 2098

页数：2

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