High Temperature Stable Operation of 1.3-μm Quantum-Dot Laser Integrated With Single-Mode Tapered Si3N4 Waveguide

被引：4

作者：

Lee, Chi-Sen ^{[1
]}

Frost, Thomas ^{[1
]}

Guo, Wei ^{[2
]}

Bhattacharya, Pallab ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ctr Nanoscale Photon & Spintron, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Dept Elect & Comp Engn, Dearborn, MI 48128 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2012年 / 24卷 / 11期

基金：

美国国家科学基金会;

关键词：

Optical interconnects; optoelectronic integration; photonic-integrated circuits; semiconductor lasers; DESIGN; SILICON;

D O I：

10.1109/LPT.2012.2190823

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A photonic-integrated circuit consisting of a 1.3-mu m quantum-dot laser and Si3N4 single-mode tapered waveguide, suitable for high temperature operation, is demonstrated. The laser active region incorporates p-doping, tunnel injection, and a superlattice barrier. The temperature dependence of the threshold current of the discrete laser is characterized by T-0 similar to infinity in the temperature range 5 degrees C <= T <= 60 degrees C and 90 K in the range 60 degrees C < T <= 85 degrees C. The Si3N4 tapered waveguide is monolithically integrated with a 2.1-mu m coupling groove. The insertion loss of a 160-mu m waveguide in the integrated circuit is 2.47 dB.

引用

页码：918 / 920

页数：3

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