Suppression of threading defects formation during Sb-assisted metamorphic buffer growth in InAs/InGaAs/InP structure

被引：19

作者：

Gocalinska, A. ^{[1
]}

Manganaro, M. ^{[1
]}

Pelucchi, E. ^{[1
]}

机构：

[1] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 15期

基金：

爱尔兰科学基金会;

关键词：

TEMPERATURE; RELAXATION; LAYERS;

D O I：

10.1063/1.3703587

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A virtual substrate for high quality InAs epitaxial layer has been attained via metalorganic vapor-phase epitaxy growth of Sb-assisted InxGa1-xAs metamorphic buffers, following a convex compositional continuous gradient of the In content from x = 53% to 100%. The use of trimethylantimony (or its decomposition products) as a surfactant has been found to crucially enable the control over the defect formation during the relaxation process. Moreover, an investigation of the wafer offcut-dependence of the defect formation and surface morphology has enabled the achievement of a reliably uniform growth on crystals with offcut towards the [111] B direction. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3703587]

引用

页数：5

共 16 条

[1] Concentration and relaxation depth profiles of InxGa1-xAs/GaAs and GaAs1-xPx/GaAs graded epitaxial films studied by x-ray diffraction [J].

Benediktovitch, A. ;

Ulyanenkov, A. ;

Rinaldi, F. ;

Saito, K. ;

Kaganer, V. M. .

PHYSICAL REVIEW B, 2011, 84 (03)

[2] AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment [J].

Dimastrodonato, V. ;

Mereni, L. O. ;

Young, R. J. ;

Pelucchi, E. .

JOURNAL OF CRYSTAL GROWTH, 2010, 312 (21) :3057-3062

[3]

Ferrari C., 2001, P 13 INT C IND PHOSP

[4]

Gocalinska A., SURFACE ORG HO UNPUB

[5] Effects of antimony (Sb) incorporation on MOVPE grown InAsyP1-y metamorphic buffer layers on InP substrates [J].

Kirch, J. ;

Kim, T. W. ;

Konen, J. ;

Mawst, L. J. ;

Kuech, T. F. ;

Kuan, T. -S. .

JOURNAL OF CRYSTAL GROWTH, 2011, 315 (01) :96-101

[6] Simultaneous measurement of wafer curvature and true temperature during metalorganic growth of group-III nitrides on silicon and sapphire [J].

Krost, A ;

Schulze, F ;

Dadgar, A ;

Strassburger, G ;

Haberland, K ;

Zettler, T .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2005, 242 (13) :2570-2574

[7] Characterization of metamorphic InxAl1-xAs/GaAs buffer layers using reciprocal space mapping [J].

Lee, D. ;

Park, M. S. ;

Tang, Z. ;

Luo, H. ;

Beresford, R. ;

Wie, C. R. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (06)

[8]

Müller BH, 1999, J APPL PHYS, V85, P8160, DOI 10.1063/1.370655

[9] Sub-meV photoluminescence linewidth and >106 cm2/Vs electron mobility in AlGaAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy on slightly misoriented substrates [J].

Pelucchi, E ;

Moret, N ;

Dwir, B ;

Oberli, DY ;

Rudra, A ;

Gogneau, N ;

Kumar, A ;

Kapon, E ;

Levy, E ;

Palevski, A .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (09)

[10] Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy [J].

Sasaki, Takuo ;

Suzuki, Hidetoshi ;

Sai, Akihisa ;

Takahasi, Masamitu ;

Fujikawa, Seiji ;

Kamiya, Itaru ;

Ohshita, Yoshio ;

Yamaguchi, Masafumi .

JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) :13-16

← 1 2 →