Optical Retroreflective Marker Fabricated on Silicon-On-Insulator

被引：6

作者：

Van Acoleyen, K. ^{[1
,2
]}

O'Brien, D. C. ^{[3
]}

Payne, F. ^{[3
]}

Bogaerts, W. ^{[1
,2
]}

Baets, R. ^{[1
,2
]}

机构：

[1] Univ Ghent, IMEC, Dept Informat Technol INTEC, Photon Res Grp, B-9000 Ghent, Belgium

[2] Univ Ghent, Ctr Nano & Biophoton NB Photon, B-9000 Ghent, Belgium

[3] Univ Oxford, Dept Engn Sci, Oxford OX1 3PJ, England

来源：

IEEE PHOTONICS JOURNAL | 2011年 / 3卷 / 05期

关键词：

Silicon nanophotonics; integrated nanophotonics; free-space communication; waveguide devices; PHASED-ARRAY;

D O I：

10.1109/JPHOT.2011.2164783

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical retroreflective markers provide a strong return signal when illuminated by a source, resulting in an easy way to localize and identify an object. As current optical retroreflectors are typically bulky, we have investigated the use of the integrated silicon photonics platform to fabricate optical retroreflectors. An optical retroreflective marker with a total field of view (FOV) of about 57 degrees x 4 degrees is shown here. With a limited number of reflectors, a large FOV can then be covered.

引用

页码：789 / 798

页数：10

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