Effect of different capacitance matching on negative capacitance FDSOI transistors

被引：24

作者：

Yu, Tianyu ^{[1
]}

Lu, Weifeng ^{[1
]}

Zhao, Zhifeng ^{[1
]}

Si, Peng ^{[1
]}

Zhang, Kai ^{[1
]}

机构：

[1] Hangzhou Dianzi Univ, Minist Educ, Key Lab RF Circuits & Syst, Hangzhou 310018, Peoples R China

来源：

MICROELECTRONICS JOURNAL | 2020年 / 98卷

基金：

中国国家自然科学基金;

关键词：

Negative capacitance transistor; Ferroelectric capacitor; Capacitance matching; Fully depleted silicon on insulator transistor; FINFET; MODEL;

D O I：

10.1016/j.mejo.2020.104730

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Negative capacitance field-effect transistors (NCFETs) have several advantages over traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) and are considered to be promising technology for the next generation of integrated circuits nodes. In this study, an NCFET based on fully depleted silicon-on-insulator (FDSOI) technology is investigated using technology computer-aided design (TCAD) simulation. The effects of capacitance matching due to ferroelectric material parameters (coercive field Ec, remnant polarization Pr) on NCFET are discussed in detail. The simulation results show that good NCFET capacitance matching is closely related to the Pr to Ec ratio (RPE), a metric that is defined for the first time. In addition, it is observed that NCFETs with a two-layer ferroelectric structure can effectively adopt the capacitance matching in different operation regions, thereby increasing the on-state current and reducing the off-state current, resulting in higher switching current ratio (I-ON/I-OFF) than the single-layer counterpart.

引用

页数：7

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