Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer

被引：9

作者：

Lu, Tzu-Chun ^{[1
]}

Ke, Min-Yung ^{[1
]}

Yang, Sheng-Chieh ^{[1
]}

Cheng, Yun-Wei ^{[1
]}

Chen, Liang-Yi ^{[1
]}

Lin, Guan-Jhong ^{[1
]}

Lu, Yu-Hsin ^{[2
]}

He, Jr-Hau ^{[1
,3
]}

Kuo, Hao-Chung ^{[2
]}

Huang, JianJang ^{[1
,3
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 106, Taiwan

[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[3] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

来源：

OPTICS LETTERS | 2010年 / 35卷 / 24期

关键词：

ENERGY-GAP; EMISSION; DIODES; DEPENDENCE; SUBSTRATE; NANORODS; FIELD;

D O I：

10.1364/OL.35.004109

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects. (C) 2010 Optical Society of America

引用

页码：4109 / 4111

页数：3

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