Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching

被引：33

作者：

Lee, S. B. ^{[1
]}

Lee, J. S. ^{[2
]}

Chang, S. H. ^{[1
]}

Yoo, H. K. ^{[1
]}

Kang, B. S. ^{[3
]}

Kahng, B. ^{[2
]}

Lee, M. -J. ^{[4
]}

Kim, C. J. ^{[4
]}

Noh, T. W. ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Phys & Astron, ReCFI, Seoul 151747, South Korea

[2] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea

[3] Hanyang Univ, Dept Appl Phys, Ansan 426791, Gyeonggi Do, South Korea

[4] Samsung Adv Inst Technol, Yongin 446712, Gyeonggi Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 03期

关键词：

MEMORY;

D O I：

10.1063/1.3543776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observed reversible-type changes between bipolar (BRS) and unipolar resistance switching (URS) in one Pt/SrTiOx/Pt capacitor. To explain both BRS and URS in a unified scheme, we introduce the "interface-modified random circuit breaker network model," in which the bulk medium is represented by a percolating network of circuit breakers. To consider interface effects in BRS, we introduce circuit breakers to investigate resistance states near the interface. This percolation model explains the reversible-type changes in terms of connectivity changes in the circuit breakers and provides insights into many experimental observations of BRS which are under debate by earlier theoretical models. (c) 2011 American Institute of Physics. [doi:10.1063/1.3543776]

引用

页数：3

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