Comparative efficiency analysis of GaN-based light-emitting diodes and laser diodes

被引：53

作者：

Piprek, Joachim ^{[1
]}

机构：

[1] NUSOD Inst LLC, Newark, DE 19714 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 02期

关键词：

Blue light emitting diodes - Comparative efficiencies - Electrical-to-optical - GaN based laser diodes - GaN-based light-emitting diodes - Hole conductivity - Solid state lighting - Wallplug efficiency;

D O I：

10.1063/1.4958619

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nobel laureate Shuji Nakamura predicted in 2014 that GaN-based laser diodes are the future of solid state lighting. However, blue GaN-lasers still exhibit less than 40% wall-plug efficiency, while some GaN-based blue light-emitting diodes exceed 80%. This paper investigates non-thermal reasons behind this difference. The inherently poor hole conductivity of the Mg-doped waveguide cladding layer of laser diodes is identified as main reason for their low electrical-to-optical energy conversion efficiency. Published by AIP Publishing.

引用

页数：4