Comparative efficiency analysis of GaN-based light-emitting diodes and laser diodes

被引:52
|
作者
Piprek, Joachim [1 ]
机构
[1] NUSOD Inst LLC, Newark, DE 19714 USA
关键词
Blue light emitting diodes - Comparative efficiencies - Electrical-to-optical - GaN based laser diodes - GaN-based light-emitting diodes - Hole conductivity - Solid state lighting - Wallplug efficiency;
D O I
10.1063/1.4958619
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nobel laureate Shuji Nakamura predicted in 2014 that GaN-based laser diodes are the future of solid state lighting. However, blue GaN-lasers still exhibit less than 40% wall-plug efficiency, while some GaN-based blue light-emitting diodes exceed 80%. This paper investigates non-thermal reasons behind this difference. The inherently poor hole conductivity of the Mg-doped waveguide cladding layer of laser diodes is identified as main reason for their low electrical-to-optical energy conversion efficiency. Published by AIP Publishing.
引用
收藏
页数:4
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