Microreplicated RF toroidal inductor

被引:22
作者
Ermolov, V [1 ]
Lindström, T
Nieminen, H
Olsson, M
Read, M
Ryhänen, T
Silanto, S
Uhrberg, S
机构
[1] Nokia Res Ctr, FIN-00045 Helsinki, Finland
[2] Amic AB, SE-75183 Uppsala, Sweden
关键词
inductors; micromachining; plastics; RF microelectromechanical system (MEMS); transformer;
D O I
10.1109/TMTT.2003.821236
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports on the modeling and fabrication of a truly three-dimensional high-quality-factor toroidal inductor using polymer replication processes. The critical dimensions are in the micrometer range, and the applied manufacturing method is based on polymer replication. Electrical measurements show that the inductor with an inductance of 6.0 nH exhibits a peak quality factor of 50 at a, frequency of 3 GHz. Model verified by the measurement results shows that further improvement is still possible. Furthermore, the applied manufacturing technique can be extended to become a flexible packaging platform.
引用
收藏
页码:29 / 37
页数:9
相关论文
共 25 条
[1]   High Q inductors for wireless applications in a complementary silicon bipolar process [J].
Ashby, KB ;
Koullias, IA ;
Finley, WC ;
Bastek, JJ ;
Moinian, S .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1996, 31 (01) :4-9
[2]   Microwave inductors and capacitors in standard multilevel interconnect silicon technology [J].
Burghartz, JN ;
Soyuer, M ;
Jenkins, KA .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1996, 44 (01) :100-104
[3]  
Burghartz JN, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P1015, DOI 10.1109/IEDM.1995.499389
[4]   RF circuit design aspects of spiral inductors on silicon [J].
Burghartz, JN ;
Edelstein, DC ;
Soyuer, M ;
Ainspan, HA ;
Jenkins, KA .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (12) :2028-2034
[5]   LARGE SUSPENDED INDUCTORS ON SILICON AND THEIR USE IN A 2-MU-M CMOS RF AMPLIFIER [J].
CHANG, JYC ;
ABIDI, AA ;
GAITAN, M .
IEEE ELECTRON DEVICE LETTERS, 1993, 14 (05) :246-248
[6]   On-chip 3D air core micro-inductor for high-frequency applications using deformation of sacrificial polymer [J].
Chomnawang, N ;
Lee, JB .
SMART STRUCTURES AND MATERIALS 2001: SMART ELECTRONICS AND MEMS, 2001, 4334 :54-62
[7]  
*COILCR INC, PROD CAT RF IND
[8]   Microwave characteristics of meander inductors fabricated by 3D self-assembly [J].
Dahlmann, GW ;
Yeatman, EM .
8TH IEEE INTERNATIONAL SYMPOSIUM ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2000, :128-133
[9]  
EKSTROM B, 1994, Patent No. 5376252
[10]  
Ermolov V., 2001, SMTA International. Proceedings of the Technical Program, P710