Luminescence of the cadmium telluride quantum dots in the porous silicon oxide

被引：3

作者：

Piskunov, N. A. ^{[1
]}

Maslennikov, E. D. ^{[1
]}

Golovan, L. A. ^{[1
]}

Kashkarov, P. K. ^{[1
,2
]}

Ostapenko, I. A. ^{[3
]}

Rodt, S. ^{[3
]}

Bimberg, D. ^{[3
]}

机构：

[1] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119991, Russia

[2] Russian Sci Ctr, Kurchatov Inst, Moscow 123182, Russia

[3] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

LASER PHYSICS | 2011年 / 21卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

CDTE NANOCRYSTALS; COMPOSITES; SENSORS;

D O I：

10.1134/S1054660X1106003X

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The luminescence of the CdTe quantum dots deposited on glass substrate and introduced into the porous silicon oxide matrix is investigated. The experimental results on the photoluminescence with one- and two-photon excitation and cathodoluminescence indicate that the quantum dots introduced into the matrix retain the luminescence properties. The coefficient of the two-photon absorption of the CdTe quantum dots on the glass substrate is determined.

引用

页码：614 / 618

页数：5

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