Endurance of chalcogenide optical phase change materials: a review

被引：49

作者：

MARTIN-MONIER, L. O. U. I. S. ^{[1
]}

POPESCU, C. O. S. M. I. N. C. O. N. S. T. A. N. T. I. N. ^{[1
]}

RANNO, L. U. I. G. I. ^{[1
]}

MILLS, B. R. I. A. N. ^{[1
]}

GEIGER, S. A. R. A. H. ^{[2
]}

CALLAHAN, D. E. N. N. I. S. ^{[2
]}

MOEBIUS, M. I. C. H. A. E. L. ^{[2
]}

HU, J. U. E. J. U. N. ^{[1
]}

机构：

[1] MIT, Dept Mat Sci & Engn, 77 Massachusetts Ave, Cambridge, MA 02139 USA

[2] Charles Stark Draper Lab Inc, Cambridge, MA 02139 USA

来源：

OPTICAL MATERIALS EXPRESS | 2022年 / 12卷 / 06期

基金：

瑞士国家科学基金会;

关键词：

CHANGE METASURFACE; SB2S3; OXIDATION; GE2SB2TE5; FILMS; VOID FORMATION; CRYSTALLIZATION; NONVOLATILE; PERFORMANCE; MECHANISM; KINETICS; TEM;

D O I：

10.1364/OME.456428

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Chalcogenide phase change materials (PCMs) are truly remarkable compounds whose unique switchable optical and electronic properties have fueled an explosion of emerging applications in electronics and photonics. Key to any application is the ability of PCMs to reliably switch between crystalline and amorphous states over a large number of cycles. While this issue has been extensively studied in the case of electronic memories, current PCM-based photonic devices show limited endurance. This review discusses the various parameters that impact crystallization and re-amorphization of several PCMs, their failure mechanisms, and formulate design rules for enhancing cycling durability of these compounds.

引用

页码：2145 / 2167

页数：23

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