Photoemission spectroscopy investigation of magnesium-Alq3 interfaces

被引：171

作者：

Rajagopal, A ^{[1
]}

Kahn, A ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 01期

关键词：

D O I：

10.1063/1.368035

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of interfaces between magnesium (Mg) and the organic molecular semiconductor tris(8-hydroxy-quinoline) aluminum (Alq(3)) is studied via ultraviolet photoemission spectroscopy. The morphology and electronic structure of Mg-on-Alq(3) and Alq(3)-on-Mg interfaces are compared. The energy of the Alq(3) molecular levels is determined in both cases with respect to a reference Fermi level as a function of interface formation. The difference in injection characteristics between the two interfaces is examined in terms of differences in interface morphology and of electronic gap states induced by the diffusion of Mg at the Mg/Alq(3) interface. (C) 1998 American Institute of Physics.

引用

页码：355 / 358

页数：4

共 17 条

[1]

Birch A. J., 1972, Adv. Org. Chem., V8, P1

[2]

Bulovic V, 1997, APPL PHYS LETT, V70, P2954, DOI 10.1063/1.119260

[3] Relationship between electroluminescence and current transport in organic heterojunction light-emitting devices [J].

Burrows, PE ;

Shen, Z ;

Bulovic, V ;

McCarty, DM ;

Forrest, SR ;

Cronin, JA ;

Thompson, ME .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) :7991-8006

[4]

HILL IG, UNPUB

[5] Chemistry, diffusion, and electronic properties of a metal/organic semiconductor contact: In/perylenetetracarboxylic dianhydride [J].

Hirose, Y ;

Kahn, A ;

Aristov, V ;

Soukiassian, P .

APPLIED PHYSICS LETTERS, 1996, 68 (02) :217-219

[6] Chemistry and electronic properties of metal-organic semiconductor interfaces: Al, Ti, In, Sn, Ag, and Au on PTCDA [J].

Hirose, Y ;

Kahn, A ;

Aristov, V ;

Soukiassian, P ;

Bulovic, V ;

Forrest, SR .

PHYSICAL REVIEW B, 1996, 54 (19) :13748-13758

[7]

HIROSE Y, 1996, THESIS PRINCETON U

[8] Energy level alignment at organic/metal interfaces studied by UV photoemission: Breakdown of traditional assumption of a common vacuum level at the interface [J].

Ishii, H ;

Seki, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (08) :1295-1301

[9]

Monch W., 1993, SEMICONDUCTOR SURFAC

[10] Energy level bending and alignment at the interface between Ca and a phenylene vinylene oligomer [J].

Park, Y ;

Choong, V ;

Ettedgui, E ;

Gao, Y ;

Hsieh, BR ;

Wehrmeister, T ;

Mullen, K .

APPLIED PHYSICS LETTERS, 1996, 69 (08) :1080-1082

← 1 2 →