Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes

被引：58

作者：

Dong, J. J. ^{[1
]}

Zhang, X. W. ^{[1
]}

Yin, Z. G. ^{[1
]}

Wang, J. X. ^{[2
]}

Zhang, S. G. ^{[1
]}

Si, F. T. ^{[1
]}

Gao, H. L. ^{[1
]}

Liu, X. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol R&D Ctr, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 17期

基金：

中国国家自然科学基金;

关键词：

P-GAN; NANOWIRE ARRAYS; FABRICATION; GROWTH; FILM;

D O I：

10.1063/1.4706259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The highly ordered and aligned ZnO nanorod arrays were grown on p-GaN substrates via a facile hydrothermal process assisted by the inverted self-assembled monolayer template, from which the ZnO nanorod/p-GaN heterojunction light emitting diodes (LEDs) were fabricated. The ZnO nanorod-based LEDs exhibit a stronger ultraviolet emission of 390 nm than the ZnO film-based counterpart, which is attributed to the low density of interfacial defects, the improved light extraction efficiency, and carrier injection efficiency through the nano-sized junctions. Furthermore, the LED with the 300 nm ZnO nanorods has a better electroluminescence performance compared with the device with the 500 nm nanorods. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4706259]

引用

页数：4

共 24 条

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