Deep level study in heteroepitaxial 3C-SiC grown on Si by hexamethyldisilane

Deep levels in 3C-SiC on Si grown by chemical vapor deposition using hexamethyldisilane (HMDS) were investigated by the deep level transient spectroscopy (DLTS). 3C-SiC epilayers, with various thicknesses were grown by changing the growth time, Relatively thin epilayers (< 1 mum) showed DLTS signals in a wide temperature range, This indicates that these epilayers have defects distributed in a wide energy range. These defects seem to originate from the 3C-SiC/Si heterointerface. On the other hand, relatively thick epilayers (> 2.2 mum) showed only one DLTS peak, which corresponds to a defect having an activation energy of about 0.25 eV, This defect is a donor defect and is identical with a defect observed in 3C-SiC grown from SiH4 + C3H8.