Ultra-thick gate oxides:: charge generation and its impact on reliability

被引：52
|
作者：
Schwalke, U
Pölzl, M
Sekinger, T
Kerber, M
机构：
[1] Infineon Technol AG, Reliabil Methodol, D-81739 Munich, Germany
[2] Infineon Technol MDCA, EZM, Villach, Austria
[3] Infineon Technol AG, AI QM WT, D-81541 Munich, Germany
来源：
MICROELECTRONICS RELIABILITY | 2001年 / 41卷 / 07期
关键词：
D O I：
10.1016/S0026-2714(01)00058-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, degradation and breakdown characteristics of ultra-thick gate oxides (T-ox: 50-150 nm) used in power MOS devices is investigated. Measurements indicate, that in addition to charge generation via Fowler-Nordheim tunneling, a second mechanism becomes dominant in ultra-thick gate oxides even at moderate electrical fields (i.e. 7-8 MV/cm). The results suggest, that impact ionization and related electron-hole pair creation by energetic electrons is responsible for the experimental observations. The impact of these results on the interpretation of lifetime extrapolations from accelerated tests will be discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1007 / 1010
页数：4
相关论文
共 50 条
  • [1] Reliability issues of ultra-thick gate oxides
    Schwalke, U
    Pölzl, M
    Sekinger, T
    Kerber, M
    2000 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2000, : 144 - 145
  • [2] Effect of nitridation on the reliability of thick gate oxides
    Wu, CT
    Mieckowski, A
    Ridley, RS
    Dolny, G
    Grebs, T
    Linn, J
    Ruzyllo, J
    MICROELECTRONICS RELIABILITY, 2003, 43 (01) : 43 - 47
  • [3] The effect of gate doping on the electrical conduction and reliability of thick gate oxides
    Khan, MK
    Zdancewicz, F
    Bhalla, A
    ISPSD '97: 1997 IEEE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 1997, : 145 - 148
  • [4] Residual Stresses Generation in Ultra-Thick Components for Wind Turbine Blades
    Struzziero, G.
    Teuwen, J. J. E.
    2ND CIRP CONFERENCE ON COMPOSITE MATERIAL PARTS MANUFACTURING, 2019, 85 : 8 - 12
  • [5] Impact failure mechanism of mining roadway under ultra-thick conglomerate
    Cao G.
    Hao Z.
    Liu H.
    Guo L.
    Zhao X.
    Zhang G.
    Caikuang yu Anquan Gongcheng Xuebao/Journal of Mining and Safety Engineering, 2019, 36 (02): : 290 - 297
  • [6] Ultra-thin gate oxides - Performance and reliability
    Iwai, H
    Momose, HS
    INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 163 - 166
  • [7] Suitable layout of gate roads related to slice mining in an ultra-thick unstable coal seam
    Fan Gangwei a
    International Journal of Mining Science and Technology, 2011, 21 (04) : 563 - 566
  • [8] Fast wafer level reliability assessment of ultra thick oxides under impact ionization conditions
    Aal, A.
    2007 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2007, : 117 - 120
  • [9] Hydrogen induced positive charge generation in gate oxides
    Zhang, JF
    Zhao, CZ
    Groeseneken, G
    Degraeve, R
    Ellis, JN
    Beech, CD
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (04) : 1911 - 1919
  • [10] Correlated defect generation in thin oxides and its impact on Flash reliability
    Ielmini, D
    Spinelli, AS
    Lacaita, AL
    van Duuren, MJ
    INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, 2002, : 143 - 146
12345