Physically Justifiable Die-Level Modeling of Spatial Variation in View of Systematic Across Wafer Variability

被引:24
作者
Cheng, Lerong [1 ]
Gupta, Puneet [2 ]
Spanos, Costas J. [3 ]
Qian, Kun [3 ]
He, Lei [2 ]
机构
[1] SanDisk Corp, Milpitas, CA 95035 USA
[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
基金
美国国家科学基金会;
关键词
Leakage analysis; spatial correlation; SSTA; timing analysis; yield modeling; ETCH RATE UNIFORMITY; TREE CONSTRUCTION; STEINER; IMPACT;
D O I
10.1109/TCAD.2010.2089568
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Modeling spatial variation is important for statistical analysis. Most existing works model spatial variation as spatially correlated random variables. We discuss process origins of spatial variability, all of which indicate that spatial variation comes from deterministic across-wafer variation, and purely random spatial variation is not significant. We analytically study the impact of across-wafer variation and show how it gives an appearance of correlation. We have developed a new die-level variation model considering deterministic across-wafer variation and derived the range of conditions under which ignoring spatial variation altogether may be acceptable. Experimental results show that for statistical timing and leakage analysis, our model is within 2% and 5% error from exact simulation result, respectively, while the error of the existing distance-based spatial variation model is up to 6.5% and 17%, respectively. Moreover, our new model is also 6x faster than the spatial variation model for statistical timing analysis and 7x faster for statistical leakage analysis.
引用
收藏
页码:388 / 401
页数:14
相关论文
共 43 条
[1]  
[Anonymous], Predictive technology model (ptm)
[2]  
BONING D, 1997, P PROC CONTR DIAGN M, P21
[3]  
Borkar S, 2003, DES AUT CON, P338
[4]   Wafer redeposition impact on etch rate uniformity in IPVD svstem [J].
Brcka, Jozef ;
Robison, Rodney L. .
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2007, 35 (01) :74-82
[5]  
Cao Z, 2006, ASIA S PACIF DES AUT, P618
[6]  
Chang HL, 2003, ICCAD-2003: IEEE/ACM DIGEST OF TECHNICAL PAPERS, P621
[7]  
Cheng LR, 2009, DES AUT CON, P104
[8]   Non-Gaussian Statistical Timing Analysis Using Second-Order Polynomial Fitting [J].
Cheng, Lerong ;
Xiong, Jinjun ;
He, Lei .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2009, 28 (01) :130-140
[9]  
CHOPRA K, 2007, P ACM IEEE INT WORKS, P86
[10]   Lack of Spatial Correlation in MOSFET Threshold Voltage Variation and Implications for Voltage Scaling [J].
Drego, Nigel ;
Chandrakasan, Anantha ;
Boning, Duane .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2009, 22 (02) :245-255