Investigations of SAW delay lines on c-plane AlN/sapphire at elevated temperatures

被引：6

作者：

Bruckner, Gudrun ^{[1
]}

Bardong, Jochen ^{[1
]}

Fachberger, Rene ^{[1
]}

Forsen, Esko ^{[2
]}

Eisele, David ^{[3
]}

机构：

[1] CTR AG, Carinthian Tech Res AG, Villach, Austria

[2] Danish Technol Inst, DTI, Taastrup, Denmark

[3] Univ Freiberg IMTEK, Dept Microsyst Engn, Freiburg, Germany

来源：

2010 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM (FCS) | 2010年

关键词：

ULTRASONIC-WAVES;

D O I：

10.1109/FREQ.2010.5556280

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Aluminum nitride (AlN) on sapphire is a promising substrate for SAW (surface acoustic wave) sensors operating at high temperatures and high frequencies. To get an experimental measure of the suitability and temperature stability of such devices, several samples of SAW delay lines were fabricated on 2 '' c-plane (0001) sapphire substrates with 1 mu m c-plane AlN layer on top. Time- and frequency responses were recorded during annealing treatments at temperatures up to 850 degrees C and the signals were analyzed afterwards.

引用

页码：499 / 502

页数：4

共 12 条

[1]

[Anonymous], 1986, Thin Solid Films

[2] Oxygen vacancy diffusion in alumina: New atomistic simulation methods applied to an old problem [J].