Investigations of SAW delay lines on c-plane AlN/sapphire at elevated temperatures

被引：6

作者：

Bruckner, Gudrun ^{[1
]}

Bardong, Jochen ^{[1
]}

Fachberger, Rene ^{[1
]}

Forsen, Esko ^{[2
]}

Eisele, David ^{[3
]}

机构：

[1] CTR AG, Carinthian Tech Res AG, Villach, Austria

[2] Danish Technol Inst, DTI, Taastrup, Denmark

[3] Univ Freiberg IMTEK, Dept Microsyst Engn, Freiburg, Germany

来源：

2010 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM (FCS) | 2010年

关键词：

ULTRASONIC-WAVES;

D O I：

10.1109/FREQ.2010.5556280

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Aluminum nitride (AlN) on sapphire is a promising substrate for SAW (surface acoustic wave) sensors operating at high temperatures and high frequencies. To get an experimental measure of the suitability and temperature stability of such devices, several samples of SAW delay lines were fabricated on 2 '' c-plane (0001) sapphire substrates with 1 mu m c-plane AlN layer on top. Time- and frequency responses were recorded during annealing treatments at temperatures up to 850 degrees C and the signals were analyzed afterwards.

引用

页码：499 / 502

页数：4

共 50 条

[1] Epitaxial AlN on c-plane sapphire by plasma nitriding
Chen, Yi-Chun
Chang, Li
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SC)
[2] C-plane chromia on c-plane sapphire
Tarre, A.
Carlotti, G.
Gerst, A.
Mandar, H.
Niilisk, A.
Sammelselg, V.
Socino, G.
Rosental, A.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 6, 2009, 6 (06): : 1472 - +
[3] HVPE growth of c-plane AlN on a-plane sapphire using nitridation layer
Takagi, Yuta
Miyagawa, Reina
Miyake, Hideto
Hiramatsu, Kazumasa
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2, 2011, 8 (02): : 470 - 472
[4] Effect of c-plane sapphire misorientation on the growth of AlN by high-temperature MOVPE
Nagamatsu, Kentaro
Okada, Narihito
Kato, Naofumi
Sumii, Takafumi
Bandoh, Akira
Iwaya, Motoaki
Kamiyama, Satoshi
Amano, Hiroshi
Akasaki, Isamu
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09): : 3048 - +
[5] Origin of a-plane (Al,Ga)N formation on patterned c-plane AlN/sapphire templates
Mogilatenko, A.
Kirmse, H.
Hagedorn, S.
Richter, E.
Zeimer, U.
Weyers, M.
Traenkle, G.
18TH MICROSCOPY OF SEMICONDUCTING MATERIALS CONFERENCE (MSM XVIII), 2013, 471
[6] Role of AlN intermediate layer in the morphological evolution of GaN nanorods grown on c-plane sapphire
Shetty, Satish
Ghatak, Jay
Shivaprasad, S. M.
CRYSTENGCOMM, 2014, 16 (15): : 3076 - 3081
[7] Dislocation Climb in c-Plane AlN Films
Fu, Wai Yuen
Kappers, Menno J.
Zhang, Yucheng
Humphreys, Colin J.
Moram, Michelle A.
APPLIED PHYSICS EXPRESS, 2011, 4 (06)
[8] Dislocation climb in c-plane ALN films
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, United Kingdom
Appl. Phys. Express, 1882, 6
[9] Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD
胡小涛
宋祎萌
苏兆乐
贾海强
王文新
江洋
李阳锋
陈弘
Chinese Physics B, 2022, (03) : 161 - 166
[10] Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD
Hu, Xiaotao
Song, Yimeng
Su, Zhaole
Jia, Haiqiang
Wang, Wenxin
Jiang, Yang
Li, Yangfeng
Chen, Hong
CHINESE PHYSICS B, 2022, 31 (03)

← 1 2 3 4 5 →