1 GHz Current Mode Class-D Power Amplifier in Hybrid Technology Using GaN HEMTs

被引：0
|
作者：
Aflaki, Pouya [1 ]
Negra, Renato [1 ]
Ghannouchi, Fadhel M. [1 ]
机构：
[1] Univ Calgary, Schulich Sch Engn, Dept Elect & Comp Engn, iRadio Lab, Calgary, AB T2N 1N4, Canada
来源：
ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY | 2008年 / 11卷 / 04期
基金：
加拿大自然科学与工程研究理事会;
关键词：
Power amplifier; high efficiency; switching-mode; current-mode class-D PA; GaN HEMT;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
This paper presents the design and implementation of a highly efficient current-mode class-D (CMCD) power amplifier (PA) using commercial 2W GaN HEMT devices. A switchedbased model developed in-house for the GaN power device is used extensively for analysing and designing the 1 GHz CMCD PA in hybrid technology. The load coupling network, comprising a load transformation network, a higher harmonic impedance termination tank and a balun, measures only 3.7 cmx7.6 cm while providing suitable means for tuning the performance of the amplifier. The fabricated hybrid CMCD PA delivers an output power of around 36 dBm with an DC-to-RF efficiency of 65% over a wide frequency band.
引用
收藏
页码：319 / 328
页数：10
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