Carbon nanotube vias fabricated by remote plasma-enhanced chemical vapor deposition

被引：25
作者：
Katagiri, Masayuki [1 ]
Sakuma, Naoshi [1 ]
Suzuki, Mariko [1 ]
Sakai, Tadashi [1 ]
Sato, Shintaro [2 ]
Hyakushima, Takashi [2 ]
Nihei, Mizuhisa [2 ]
Awano, Yuji [2 ]
机构：
[1] MIRAI Selete Semicond Leading Edge Technol Inc, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan
[2] MIRAI Selete Semicond Leading Edge Technol Inc, Kanagawa 2430197, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 04期
关键词：
carbon nanotube; plasma-enhanced chemical vapor deposition; low-temperature growth; interconnect; via; resistance;
D O I：
10.1143/JJAP.47.2024
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Multiwalled carbon nanotubes (CNTs) have been grown by remote plasma-enhanced chemical vapor deposition at temperatures as low as 400 degrees C. In via formation, the selective growth of CNT bundles in via holes at 430 degrees C and chemical mechanical polishing for planarization have been performed. The electrical evaluation of CNT single vias with various diameters reveals that the via resistance is inversely proportional to the via area. This result indicates that the CNTs are grown with uniform quality and density in the via holes with various diameters and stable contact formations are obtained. Moreover, the resistances of single vias are approximately equivalent to the via resistances estimated from the resistances of via chains, demonstrating the via-to-via uniformity of the CNT vias obtained by the remote plasma-enhanced chemical vapor deposition.
引用
收藏
页码：2024 / 2027
页数：4
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