Characterization and Switching Strategy Development for SMP SiC Power Modules

被引：0

作者：

Shiogai, Yu ^{[1
]}

Castellazzi, Alberto ^{[2
]}

Hikihara, Takashi ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Engn, Kyoto, Japan

[2] Kyoto Univ Adv Sci, Fac Engn, SP2 Lab, Kyoto, Japan

来源：

2022 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-HIMEJI 2022- ECCE ASIA) | 2022年

关键词：

Switching loss; silicon carbide (SiC); topology; MOSFET; high-frequency switching; modular design; power converters; low-load efficiency;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper proposes the experimental characterization of a SiC power converter designed with three parallel legs, each comprising of a half-bridge switch and an inductive filter, in which the number of active legs is varied as a function of the load. The results demonstrate that low-load efficiency can he significantly boosted with this approach, while it was already shown that power density is not affected.

引用

页码：2268 / 2274

页数：7

共 11 条

[1]

Anthon A, 2014, IEEE IND ELEC, P1854, DOI 10.1109/IECON.2014.7048754

[2]

Davis AngelaY., 2010, NARRATIVE LIFE F DOU, P21

[3] Band structure, deformation potentals, and carrier mobility in strained Si, Ge, and SiGe alloys [J].