Low temperature formation of high-quality crystalline Ge (111) by improving Au catalyst crystallinity

We have investigated the Au catalyst crystallinity modulation effect of solid phase crystallization for amorphous Ge / Au / SiO2 stacked structure. Without using Au crystallinity modulation, the preferentially (111) oriented crystalline Ge was formed after annealing at 200 degrees C, however, Au atoms were highly included (similar to 50 %) in the crystallized Ge. On the other hand, when Au crystallinity modulation by post Au-evaporation annealing utilized, the Au atom diffusion into Ge was significantly suppressed (<1%). We have confirmed that low temperature formation of the preferentially (111) oriented crystalline Ge without Au contamination by improving Au catalyst crystallinity.