Quantum pumping and quantized magnetoresistance in a Hall bar

被引:12
作者
Blaauboer, M [1 ]
机构
[1] Delft Univ Technol, Dept Nanosci, NL-2628 CJ Delft, Netherlands
关键词
D O I
10.1103/PhysRevB.68.205316
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We show how a dc current can be generated in a Hall bar without applying a bias voltage. The Hall resistance R-H that corresponds to this pumped current is quantized, just as in the usual integer quantum Hall effect (IQHE). In contrast with the IQHE, however, the longitudinal resistance R-xx does not vanish on the plateaus, but equals the Hall resistance. We propose an experimental geometry to measure the pumped current and verify the predicted behavior of R-H and R-xx.
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页数:5
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