Preparation and electrical properties of Bi3.25Pr0.75Ti3O12 ferroelectric thin films

被引：24

作者：

Wu, D ^{[1
]}

Li, AD

Yu, T

Ming, NB

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China

[3] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2004年 / 78卷 / 01期

关键词：

D O I：

10.1007/s00339-002-1992-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bi3.25Pr0.75Ti3O12 (BPT) ferroelectric thin films have been prepared by chemical solution deposition on platinized Si substrates. Well-crystallized BPT films can be achieved by 600degreesC rapid thermal annealing. The film surface is smooth and crack-free, composed of uniform spherical grains around 90-100 nm in diameter. The electrical properties of Pt/BPT/Pt thin film capacitors were characterized by hysteresis and impedance measurements. The remanent polarization of 700degreesC annealed BPT films is around 20 muC/cm(2) at 120-kV/cm stimulus field. The dielectric constant is around 380 at 10 kHz, 100-mV amplitude. The remanent polarization of BPT film showed a slight reduction, 10% of its original value, after 2.8 x 10(9) cycles, while a similar to30% reduction of non-volatile polarization was observed.

引用

页码：95 / 99

页数：5

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