Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications

被引：58

作者：

Hoffman, J. ^{[1
,2
]}

Hong, X. ^{[3
]}

Ahn, C. H. ^{[1
,2
]}

机构：

[1] Yale Univ, Dept Appl Phys, New Haven, CT 06511 USA

[2] Yale Univ, CRISP, New Haven, CT 06511 USA

[3] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

来源：

NANOTECHNOLOGY | 2011年 / 22卷 / 25期

基金：

美国国家科学基金会;

关键词：

FIELD-EFFECT TRANSISTOR; MOTT TRANSITION;

D O I：

10.1088/0957-4484/22/25/254014

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ferroelectric field effect devices offer the possibility of non-volatile data storage. Attempts to integrate perovskite ferroelectric materials with silicon semiconductors, however, have been largely unsuccessful in creating non-volatile, nondestructive read memory elements because of difficulties in controlling the ferroelectric/semiconductor interface. Correlated oxide systems have been explored as alternative channel materials to form all-perovskite field effect devices. We examine a non-volatile memory using an electric-field-induced metal-insulator transition in PbZr0.2Ti0.8O3/La1-xSrxMnO3 (PZT/LSMO), PZT/La1-xCaxMnO3 (PZT/LCMO) and PZT/La1-xSrxCoO3 (PZT/LSCO) devices. The performance of these devices in the areas of switching time and retention are discussed.

引用

页数：4

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