The effect of end and edge shape on the performance of pseudo-spin valve memories

被引：75

作者：

Gadbois, J

Zhu, JG

Vavra, W

Hurst, A

机构：

[1] Univ Minnesota, Minneapolis, MN 55455 USA

[2] Honeywell Corp, SSEC, Plymouth, MN 55441 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1998年 / 34卷 / 04期

关键词：

MRAM; GMRAM; micromagnetics simulation; edge domains;

D O I：

10.1109/20.706358

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Three Giant Magnetoresistive Random Access Memories (GMRAM) using different device shapes have been simulated. Tapered bits were found to provide the lowest switching thresholds while maintaining bit stability. The effect of edge roughness were found to have lower switching fields but also have limited output signals.

引用

页码：1066 / 1068

页数：3

共 5 条

[1]

POHN AV, 1988, 4 JOINT MMM INT C VA

[2] SPIN-VALVE RAM CELL [J].