Barrierless self-assembly of Ge quantum dots on Si(001) substrates with high local vicinality

被引：12
|
作者：
Sutter, P [1 ]
Sutter, E
Vescan, L
机构：
[1] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA
[2] Forschungszentrum Julich, Inst Schichten & Grenzflachen, D-52425 Julich, Germany
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 16期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2108133
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In Ge heteroepitaxy on vicinal Si(001), miscut by 4.8 degrees toward [100], pyramid-shaped faceted quantum dot islands ("huts") form continuously from individual (105) facets on a wetting layer of coexisting (105) and (001) segments. Via this barrierless kinetic route the first three-dimensional islands rapidly form wherever there are substantial local gradients along < 100 > in-plane directions. (C) 2005 American Institute of Physics.
引用
收藏
页码：1 / 3
页数：3
相关论文
共 50 条
  • [1] Thermodynamic model of metal-induced self-assembly of Ge quantum dots on Si substrates
    X. L. Li
    G. Ouyang
    G. W. Yang
    The European Physical Journal B, 2008, 62 : 295 - 298
  • [2] Thermodynamic model of metal-induced self-assembly of Ge quantum dots on Si substrates
    Li, X. L.
    Ouyang, G.
    Yanga, G. W.
    EUROPEAN PHYSICAL JOURNAL B, 2008, 62 (03): : 295 - 298
  • [3] Self-assembly of Ge quantum dots on periodically corrugated Si surfaces
    Buljan, M.
    Facsko, S.
    Marion, I. Delac
    Trontl, V. Miksic
    Kralj, M.
    Jercinovic, M.
    Baehtz, C.
    Muecklich, A.
    Holy, V.
    Radic, N.
    Grenzer, J.
    APPLIED PHYSICS LETTERS, 2015, 107 (20)
  • [4] Self-assembly of InAs and Si/Ge quantum dots on structured surfaces
    Patella, F
    Sgarlata, A
    Arciprete, F
    Nufris, S
    Szkutnik, PD
    Placidi, E
    Fanfoni, M
    Motta, N
    Balzarotti, A
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (17) : S1503 - S1534
  • [5] The challenges in guided self-assembly of Ge and InAs quantum dots on Si
    Zhao, Z. M.
    Yoon, T. S.
    Feng, W.
    Li, B. Y.
    Kim, J. H.
    Liu, J.
    Hulko, O.
    Xie, Y. H.
    Kim, H. M.
    Kim, K. B.
    Kim, H. J.
    Wang, K. L.
    Ratsch, C.
    Caflisch, R.
    Ryu, D. Y.
    Russell, T. P.
    THIN SOLID FILMS, 2006, 508 (1-2) : 195 - 199
  • [6] Ge quantum dots in Si: self-assembly, stacking and level spectroscopy
    Brunner, K
    Herbst, M
    Bougeard, D
    Miesner, C
    Asperger, T
    Schramm, C
    Abstreiter, G
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 1018 - 1021
  • [7] Local structure of self-organized uniform Ge quantum dots on Si(001)
    Erenburg, SB
    Bausk, NV
    Mazalov, LN
    Nikiforov, AI
    Stepina, NP
    Nenashev, AV
    Yakimov, AI
    SOLID STATE IONICS, 2001, 141 : 135 - 139
  • [8] Self-assembly of epitaxially grown Ge/Si quantum dots enhanced by As ion implantation
    Gaiduk, PI
    Larsen, AN
    Hansen, JL
    Mudryj, AV
    Samtsov, MP
    Demenschenok, AN
    APPLIED PHYSICS LETTERS, 2001, 79 (24) : 4025 - 4027
  • [9] Effect of deposition rate on the characteristics of Ge quantum dots on Si (001) substrates
    Gotoh, Kazuhiro
    Oshima, Ryuji
    Sugaya, Takeyoshi
    Sakata, Isao
    Matsubara, Koji
    Kondo, Michio
    THIN SOLID FILMS, 2014, 557 : 80 - 83
  • [10] Superlattices of self-assembled Ge/Si(001) quantum dots
    Le Thanh, V
    Yam, V
    APPLIED SURFACE SCIENCE, 2003, 212 : 296 - 304
12345