Low temperature growth of patterned ZnO nanowires and their field emission characteristics

被引：1

作者：

Zhang Yong-ai ^{[1
]}

Lin Jin-yang ^{[1
]}

Wu Chao-xing ^{[1
]}

Guo Tai-Liang ^{[1
]}

机构：

[1] Fuzhou Univ, Sch Phys & Informat Engn, Fuzhou 350002, Peoples R China

来源：

MECHANICAL AND AEROSPACE ENGINEERING, PTS 1-7 | 2012年 / 110-116卷

关键词：

ZnO nanowires; Patterned growth; Field emissio; NANORODS;

D O I：

10.4028/www.scientific.net/AMM.110-116.1918

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

Uniformly distributed and quasi-perpendicular patterned ZnO nanowires were synthesized on Ag electrodes coated Si substrate by thermal evaporation. Field emission (FE) measurements show that its turn-on field is 3.65V/mu m at current density of 10 mu A/cm2 and its the threshold field at current density of 1mA/cm2 is about 6.56 V/mu m at an emitter-anode gap of 400 mu m. and the fluctuation of FE current density is smaller than 10% for 3.5h at electric field of 6V/mu m. The low turn-on field and good stability indicates that it offers advantages as field emitter for much potential application.

引用

页码：1918 / 1922

页数：5

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