Observation of single-walled carbon nanotubes by photoemission microscopy

被引：9

作者：

Suzuki, S ^{[1
]}

Watanabe, Y

Ogino, T

Homma, Y

Takagi, D

Heun, S

Gregoratti, L

Barinov, A

Kiskinova, M

机构：

[1] NTT Corp, NTT Basic Res Labs, Surface Sci Res Grp, Atsugi, Kanagawa 2430198, Japan

[2] Meiji Univ, Dept Phys, Atsugi, Kanagawa 2148571, Japan

[3] Sincrotrone Trieste, I-34012 Trieste, Italy

来源：

CARBON | 2004年 / 42卷 / 03期

关键词：

carbon nanotubes; chemical vapor deposition; X-ray photoelectron spectroscopy; electronic properties;

D O I：

10.1016/j.carbon.2003.12.056

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Single-walled carbon nanotube networks grown on SiO2 pillars were studied by means of scanning photoemission microscopy. The individual nanotubes or nanotube bundles growing from the pillar tops were observed in C 1s images. Band bending near catalytic Fe/nanotube contacts in an end-bonded configuration was studied by measuring C 1s spectra along the tube axes. Within our experimental resolution, no band bending was observed. This implies that the depletion width is less than the spatial resolution of the scanning photoemission microscope (90 nm) or that the amount of the band bending is less than 0.1 eV. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：559 / 563

页数：5

共 19 条

[1] Field-modulated carrier transport in carbon nanotube transistors [J].

Appenzeller, J ;

Knoch, J ;

Derycke, V ;

Martel, R ;

Wind, S ;

Avouris, P .

PHYSICAL REVIEW LETTERS, 2002, 89 (12) :126801-126801

[2] Cross sectional studies of buried semiconductor interfaces by means of photoemission microscopy [J].

Barbo, F ;

Bertolo, M ;

Bianco, A ;

Cautero, G ;

Fontana, S ;

Johal, TK ;

La Rosa, S ;

Purandare, RC ;

Svetchnikov, N ;

Franciosi, A ;

Orani, D ;

Piccin, M ;

Rubini, S ;

Cimino, R .

APPLIED PHYSICS LETTERS, 2002, 80 (14) :2511-2513

[3] Electronic structure of the carbon nanotube tips studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy [J].

Chiou, JW ;

Yueh, CL ;

Jan, JC ;

Tsai, HM ;

Pong, WF ;

Hong, IH ;

Klauser, R ;

Tsai, MH ;

Chang, YK ;

Chen, YY ;

Wu, CT ;

Chen, KH ;

Wei, SL ;

Wen, CY ;

Chen, LC ;

Chuang, TJ .

APPLIED PHYSICS LETTERS, 2002, 81 (22) :4189-4191

[4] Controlled creation of a carbon nanotube diode by a scanned gate [J].

Freitag, M ;

Radosavljevic, M ;

Zhou, YX ;

Johnson, AT ;

Smith, WF .

APPLIED PHYSICS LETTERS, 2001, 79 (20) :3326-3328

[5] Root-growth mechanism for single-wall carbon nanotubes [J].

Gavillet, J ;

Loiseau, A ;

Journet, C ;

Willaime, F ;

Ducastelle, F ;

Charlier, JC .

PHYSICAL REVIEW LETTERS, 2001, 87 (27) :275504-1

[6] Growth of suspended carbon nanotube networks on 100-nm-scale silicon pillars [J].

Homma, Y ;

Kobayashi, Y ;

Ogino, T ;

Yamashita, T .

APPLIED PHYSICS LETTERS, 2002, 81 (12) :2261-2263

[7] Synchrotron radiation scanning photoemission microscopy: Instrumentation and application in surface science [J].

Kiskinova, M ;

Marsi, M ;

Di Fabrizio, E ;

Gentili, M .

SURFACE REVIEW AND LETTERS, 1999, 6 (02) :265-286

[8] Formation of low-resistance ohmic contacts between carbon nanotube and metal electrodes by a rapid thermal annealing method [J].

Lee, JO ;

Park, C ;

Kim, JJ ;

Kim, J ;

Park, JW ;

Yoo, KH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (16) :1953-1956

[9] Novel length scales in nanotube devices [J].

Léonard, F ;

Tersoff, J .

PHYSICAL REVIEW LETTERS, 1999, 83 (24) :5174-5177

[10] Role of Fermi-level pinning in nanotube Schottky diodes [J].

Léonard, F ;

Tersoff, J .

PHYSICAL REVIEW LETTERS, 2000, 84 (20) :4693-4696

← 1 2 →