Recent Progress of Solution-Processed Copper-based p-Channel Thin-Film Transistors

被引:8
|
作者
Al-Jawhari, Hala A. [1 ]
机构
[1] King Abdulaziz Univ, Dept Phys, Jeddah 21551, Saudi Arabia
关键词
copper iodide; copper oxide; copper thiocyanate; P-type inorganic semiconductors; solution-processed thin-film transistors; LOW-TEMPERATURE; OXIDE SEMICONDUCTORS; SIO2/SI SUBSTRATE; CU2O; FIELD; PERFORMANCE; MOBILITY; CUO; MICROSTRUCTURES; NANOPARTICLES;
D O I
10.1002/aelm.202100893
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The development of well-performing p-type semiconductors is essential in pushing transparent electronics to the next frontier. Copper oxide (CuxO) is a potentially attractive hole-transport material for such applications because of its native p-type semi-conductivity, abundant availability, non-toxic nature, and low production cost. Solution-based processing methods offer many other advantages for the fabrication of metal oxides, including a high level of control over stoichiometry, microstructure, and morphology development, as well as tremendous flexibility in terms of materials and end-use architectures. This review will cover the current progress of synthesis and deposition of solution-based CuxO thin films for the purpose of thin-film transistors (TFTs). It will show the rapidly growing effort in this field to utilize low-temperature methods, nanoscale patterning, and green synthesis. Additionally, the emerging solution-processed TFTs made of nonoxide copper-based semiconductors such as halide and (pseudo) halide materials will be discussed.
引用
收藏
页数:21
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