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Recent Progress of Solution-Processed Copper-based p-Channel Thin-Film Transistors
被引:8
|作者:
Al-Jawhari, Hala A.
[1
]
机构:
[1] King Abdulaziz Univ, Dept Phys, Jeddah 21551, Saudi Arabia
关键词:
copper iodide;
copper oxide;
copper thiocyanate;
P-type inorganic semiconductors;
solution-processed thin-film transistors;
LOW-TEMPERATURE;
OXIDE SEMICONDUCTORS;
SIO2/SI SUBSTRATE;
CU2O;
FIELD;
PERFORMANCE;
MOBILITY;
CUO;
MICROSTRUCTURES;
NANOPARTICLES;
D O I:
10.1002/aelm.202100893
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
The development of well-performing p-type semiconductors is essential in pushing transparent electronics to the next frontier. Copper oxide (CuxO) is a potentially attractive hole-transport material for such applications because of its native p-type semi-conductivity, abundant availability, non-toxic nature, and low production cost. Solution-based processing methods offer many other advantages for the fabrication of metal oxides, including a high level of control over stoichiometry, microstructure, and morphology development, as well as tremendous flexibility in terms of materials and end-use architectures. This review will cover the current progress of synthesis and deposition of solution-based CuxO thin films for the purpose of thin-film transistors (TFTs). It will show the rapidly growing effort in this field to utilize low-temperature methods, nanoscale patterning, and green synthesis. Additionally, the emerging solution-processed TFTs made of nonoxide copper-based semiconductors such as halide and (pseudo) halide materials will be discussed.
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页数:21
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