Accurate continuous monitoring using ISFET-based biosensors based on characterization and modeling of drift and low frequency noise

被引:0
作者
Jamasb, S [1 ]
Churchill, JN [1 ]
Collins, SD [1 ]
Smith, RL [1 ]
机构
[1] Commquest, Encinitas, CA 92024 USA
来源
PROCEEDINGS OF THE 20TH ANNUAL INTERNATIONAL CONFERENCE OF THE IEEE ENGINEERING IN MEDICINE AND BIOLOGY SOCIETY, VOL 20, PTS 1-6: BIOMEDICAL ENGINEERING TOWARDS THE YEAR 2000 AND BEYOND | 1998年 / 20卷
关键词
biosensors; continuous monitoring; drift; ISFET; noise; pH;
D O I
暂无
中图分类号
R5 [内科学];
学科分类号
1002 ; 100201 ;
摘要
The merit of a recently reported method for correction of drift in pH-sensitive ISFET's [1] is further examined by considering the distinction between drift and low-frequency noise. A physical model for drift in pH-sensitive ISFET's has been employed to isolate the low frequency noise associated with these devices. Characterization of the low-frequency noise behavior of ISFET-based biosensors, is particularly relevant to the applicability of the proposed method which is based on monitoring the differential of the sensor output signal over sufficiently small intervals of time. The validity of the reported corrective scheme for continuous monitoring of pH is experimentally confirmed under conditions approximating acute metabolic acidocis using a Si3N4-gate pH-sensitive ISFET whose noise spectrum was characterized apriori. The theoretical and experimental results presented in this work have a direct bearing on ISFET-based biosensors which detect a local pH change using a pH-sensitive ISFET, such as ISFET glucose sensors.
引用
收藏
页码:2864 / 2867
页数:4
相关论文
共 19 条
[1]  
AFROMOWITZ MA, 1977, J BIOENG, V1, P55
[2]   THE CHARACTERIZATION AND COMPENSATION THROUGH SENSOR ARRAY SIGNAL-PROCESSING TECHNIQUES OF DRIFT AND LOW-FREQUENCY NOISE IN THICK-FILM SEMICONDUCTOR SENSORS [J].
ATKINSON, JK ;
SION, RP ;
SIZELAND, E .
SENSORS AND ACTUATORS A-PHYSICAL, 1994, 42 (1-3) :607-611
[3]   The future of biosensors [J].
Bergveld, P .
SENSORS AND ACTUATORS A-PHYSICAL, 1996, 56 (1-2) :65-73
[4]  
BERGVELD P, 1988, COMPREHENSIVE ANAL C, V23
[5]   FIELD-EFFECT TRANSISTOR SENSITIVE TO PENICILLIN [J].
CARAS, S ;
JANATA, J .
ANALYTICAL CHEMISTRY, 1980, 52 (12) :1935-1937
[6]  
CLARK LC, 1956, T AM SOC ART INT ORG, V2, P41
[7]  
Fraden J., 1996, HDB MODERN SENSORS
[8]  
GRAY PR, 1984, ANAL DESIGN ANAL INT
[9]   ION-SENSING DEVICES WITH SILICON-NITRIDE AND BOROSILICATE GLASS INSULATORS [J].
HARAME, DL ;
BOUSSE, LJ ;
SHOTT, JD ;
MEINDL, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) :1700-1707
[10]  
JAMASB S, 1998, IN PRESS SENSORS A B