Tailoring of self-assembled monolayer for polymer light-emitting diodes

被引：59

作者：

Choi, B ^{[1
]}

Rhee, J ^{[1
]}

Lee, HH ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Chem Engn, Seoul 151742, South Korea

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 13期

关键词：

D O I：

10.1063/1.1398327

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The choice of a self-assembled monolayer (SAM) is tailored to specifically remove water on an indium-tin oxide electrode and to reduce barrier height for long-term stability of polymer light-emitting diodes. Water, which is a major cause of long-term degradation, is shown to have entirely reversible effects on the power efficiency of the device. It is shown that the use of a SAM for the specific purposes results in a more than an order of magnitude increase in the half lifetime of the device based on poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]. (C) 2001 American Institute of Physics.

引用

页码：2109 / 2111

页数：3

共 20 条

[1]

Bliznyuk V, 1999, ADV MATER, V11, P1257, DOI 10.1002/(SICI)1521-4095(199910)11:15<1257::AID-ADMA1257>3.0.CO

[2]

2-D

[3] Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers [J].

Campbell, IH ;

Rubin, S ;

Zawodzinski, TA ;

Kress, JD ;

Martin, RL ;

Smith, DL ;

Barashkov, NN ;

Ferraris, JP .

PHYSICAL REVIEW B, 1996, 54 (20) :14321-14324

[4] Controlling charge injection in organic electronic devices using self-assembled monolayers [J].

Campbell, IH ;

Kress, JD ;

Martin, RL ;

Smith, DL ;

Barashkov, NN ;

Ferraris, JP .

APPLIED PHYSICS LETTERS, 1997, 71 (24) :3528-3530

[5] Improved stability of interfaces in organic light emitting diodes with high Tg materials and self-assembled monolayers [J].

Carrard, M ;

Goncalves-Conto, S ;

Si-Ahmed, L ;

Adès, D ;

Siove, A .

THIN SOLID FILMS, 1999, 352 (1-2) :189-194

[6] Surface treatment of indium tin oxide by SF6 plasma for organic light-emitting diodes [J].

Choi, B ;

Yoon, H ;

Lee, HH .

APPLIED PHYSICS LETTERS, 2000, 76 (04) :412-414

[7] In situ characterization of the oxidative degradation of a polymeric light emitting device [J].

Cumpston, B.H. ;

Parker, I.D. ;

Jensen, K.F. .

1997, American Inst of Physics, Woodbury, NY, United States (81)

[8] Morphological change in the degradation of A1 electrode surfaces of electroluminescent devices by fluorescence microscopy and AFM [J].

Do, LM ;

Oyamada, M ;

Koike, A ;

Han, EM ;

Yamamoto, N ;

Fujihira, M .

THIN SOLID FILMS, 1996, 273 (1-2) :209-213

[9] In situ investigation of degradation in polymeric electroluminescent devices using time-resolved confocal laser scanning microscope [J].

Do, LM ;

Kim, KJ ;

Zyung, T ;

Shim, HK ;

Kim, JJ .

APPLIED PHYSICS LETTERS, 1997, 70 (25) :3470-3472

[10] Molecular level alignment at organic semiconductor-metal interfaces [J].

Hill, IG ;

Rajagopal, A ;

Kahn, A ;

Hu, Y .

APPLIED PHYSICS LETTERS, 1998, 73 (05) :662-664

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