Multiscale modeling and experimental analysis of chemical vapor deposited aluminum films: Linking reactor operating conditions with roughness evolution

被引:20
作者
Aviziotis, Ioannis G. [1 ,2 ]
Cheimarios, Nikolaos [3 ]
Duguet, Thomas [2 ]
Vahlas, Constantin [2 ]
Boudouvis, Andreas G. [1 ]
机构
[1] Natl Tech Univ Athens, Sch Chem Engn, Heroon Polytech 9, Zografos 15780, Greece
[2] Univ Toulouse, CNRS, CIRIMAT, 4 Allee Emile Monso,BP 44362, F-31030 Toulouse 4, France
[3] Scien SARL, 16 Rue Arcade, F-75008 Paris, France
关键词
Multiscale modeling; Sticking coefficient; Aluminum CVD; RMS roughness; Electrical resistivity; DIMETHYLETHYLAMINE-ALANE; THIN-FILM; SURFACE-ROUGHNESS; AL FILMS; TEMPERATURE-DEPENDENCE; STOCHASTIC SIMULATION; PROTEIN ADSORPTION; SELF-DIFFUSION; CRYSTAL-GROWTH; SILICON;
D O I
10.1016/j.ces.2016.08.039
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
When composition and crystallographic structure remain constant, film properties mainly depend on microstructure and surface morphology. In this case, the proper modeling of a growing film allows linking the final surface features with the operating conditions at the reactor scale which in turn enables the control of the properties of the final film. In this work, an experimentally supported, coarse-grained, multiscale framework is applied for the modeling of the surface roughness of aluminum thin films processed by chemical vapor deposition from dimethylethylamine alane. The multiscale framework is developed by linking macroscopic transport phenomena based on continuum mechanics models with nanoscale surface events which are simulated stochastically. The model reproduces experimental data successfully, thus validating the method with good statistics. Finally, modeling of surface roughness enables the estimation of the electrical resistivity in good agreement with corresponding measurements. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:449 / 458
页数:10
相关论文
共 78 条
[1]   Enhanced nucleation of Al islands on H-dosed Si(100)-2 x 1 surface: A combined density functional theory and kinetic Monte Carlo study [J].
Albao, Marvin A. ;
Putungan, Darwin B. ;
Hsu, Chia-Hsiu ;
Chuang, Feng-Chuan .
SURFACE SCIENCE, 2013, 617 :73-80
[2]  
[Anonymous], 1998, ANAL TRANSPORT PHENO
[3]  
[Anonymous], 2004, MARKOV CHAIN MONTE C
[4]   Investigation of the kinetics of the chemical vapor deposition of aluminum from dimethylethylamine alane: experiments and computations [J].
Aviziotis, Ioannis G. ;
Duguet, Thomas ;
Soussi, Khaled ;
Kokkoris, George ;
Cheimarios, Nikolaos ;
Vahlas, Constantin ;
Boudouvis, Andreas G. .
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 7, 2015, 12 (07) :923-930
[5]   Multiscale investigation of the influence of surface morphology on thin film CVD [J].
Barbato, A. ;
Fiorucci, A. ;
Rondanini, M. ;
Cavallotti, C. .
SURFACE & COATINGS TECHNOLOGY, 2007, 201 (22-23) :8884-8887
[6]   Atomic-scale simulations of chemical vapor deposition on flat and vicinal diamond substrates [J].
Battaile, CC ;
Srolovitz, DJ ;
Butler, JE .
JOURNAL OF CRYSTAL GROWTH, 1998, 194 (3-4) :353-368
[7]   Kinetic Monte Carlo simulation of chemical vapor deposition [J].
Battaile, CC ;
Srolovitz, DJ .
ANNUAL REVIEW OF MATERIALS RESEARCH, 2002, 32 :297-319
[8]   Wetting properties of the multiscaled nanostructured polymer and metallic superhydrophobic surfaces [J].
Bormashenko, Edward ;
Stein, Tamir ;
Whyman, Gene ;
Bormashenko, Yelena ;
Pogreb, Roman .
LANGMUIR, 2006, 22 (24) :9982-9985
[9]   Transparent superhydrophobic films based on silica nanoparticles [J].
Bravo, Javier ;
Zhai, Lei ;
Wu, Zhizhong ;
Cohen, Robert E. ;
Rubner, Michael F. .
LANGMUIR, 2007, 23 (13) :7293-7298
[10]   Multiscale simulation of silicon film growth [J].
Cavallotti, C ;
Pantano, E ;
Veneroni, A ;
Masi, M .
CRYSTAL RESEARCH AND TECHNOLOGY, 2005, 40 (10-11) :958-963