Tunneling magnetoresistance of magnetic tunnel junctions using perpendicular magnetization L10-CoPt electrodes

被引：138

作者：

Kim, Gukcheon ^{[1
]}

Sakuraba, Yuya ^{[2
]}

Oogane, Mikihiko ^{[1
]}

Ando, Yasuo ^{[1
]}

Miyazaki, Terunobu ^{[3
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 980, Japan

[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[3] Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 17期

关键词：

D O I：

10.1063/1.2913163

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetic tunnel junctions (MTJs) using L1(0)-ordered CoPt electrodes with perpendicular magnetic anisotropy were fabricated. Full-epitaxial CoPt/MgO/CoPt-MTJs were prepared onto single crystal MgO-(001) substrate by sputtering method. X-ray diffraction analyses revealed that both bottom and top CoPt electrodes were epitaxially grown with (001)-orientation. The L1(0)-chemical order parameter of 0.82 was obtained for the bottom CoPt electrode deposited at substrate temperature of 600 degrees C. The transport measurements with applying magnetic field perpendicular to the film plane showed a tunnel magnetoresistance ratio of 6% at room temperature and 13% at 10 K. (C) 2008 American Institute of Physics.

引用

页数：3

共 11 条

[1] On the relationship of magnetocrystalline anisotropy and stoichiometry in epitaxial L10 CoPt (001) and FePt (001) thin films -: art. no. 033904 [J].

Barmak, K ;

Kim, J ;

Lewis, LH ;

Coffey, KR ;

Toney, MF ;

Kellock, AJ ;

Thiele, JU .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)

[2] 230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions [J].

Djayaprawira, DD ;

Tsunekawa, K ;

Nagai, M ;

Maehara, H ;

Yamagata, S ;

Watanabe, N ;

Yuasa, S ;

Suzuki, Y ;

Ando, K .

APPLIED PHYSICS LETTERS, 2005, 86 (09) :1-3

[3] Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions [J].

Hayakawaa, J. ;

Ikeda, S. ;

Lee, Y. M. ;

Matsukura, F. ;

Ohno, H. .

APPLIED PHYSICS LETTERS, 2006, 89 (23)

[4] MAGNETIC HARDENING AND COERCIVITY MECHANISMS IN L1(0) ORDERED FEPD FERROMAGNETS [J].

KLEMMER, T ;

HOYDICK, D ;

OKUMURA, H ;

ZHANG, B ;

SOFFA, WA .

SCRIPTA METALLURGICA ET MATERIALIA, 1995, 33 (10-11) :1793-1805

[5] Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(001) junction [J].

Mathon, J ;

Umerski, A .

PHYSICAL REVIEW B, 2001, 63 (22)

[6] Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers [J].

Parkin, SSP ;

Kaiser, C ;

Panchula, A ;

Rice, PM ;

Hughes, B ;

Samant, M ;

Yang, SH .

NATURE MATERIALS, 2004, 3 (12) :862-867

[7] Design and recording properties of FE-PT perpendicular media [J].

Suzuki, T ;

Muraoka, H ;

Nakamura, Y ;

Ouchi, K .

IEEE TRANSACTIONS ON MAGNETICS, 2003, 39 (02) :691-696

[8] Preparation of ordered Fe-Pt thin films for perpendicular magnetic recording media [J].

Suzuki, T ;

Harada, K ;

Honda, N ;

Ouchi, K .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 193 (1-3) :85-88

[9] DIRECT FORMATION OF ORDERED COPT AND FEPT COMPOUND THIN-FILMS BY SPUTTERING [J].

VISOKAY, MR ;

SINCLAIR, R .

APPLIED PHYSICS LETTERS, 1995, 66 (13) :1692-1694

[10]

Yamami K., 2004, APPL PHYS LETT, V85, P5634

← 1 2 →