Insertion of CdSe quantum dots in ZnSe nanowires: Correlation of structural and chemical characterization with photoluminescence

被引：11

作者：

Den Hertog, M. ^{[1
,2
]}

Elouneg-Jamroz, M. ^{[1
,2
]}

Bellet-Amalric, E. ^{[3
]}

Bounouar, S. ^{[1
,2
]}

Bougerol, C. ^{[1
,2
]}

Andre, R. ^{[1
,2
]}

Genuist, Y. ^{[1
,2
]}

Poizat, J. P. ^{[1
,2
]}

Kheng, K. ^{[3
]}

Tatarenko, S. ^{[1
,2
]}

机构：

[1] CNRS, CEA CNRS Grp Nanophys & Semicond, Inst Neel, F-38042 Grenoble 9, France

[2] Univ Grenoble 1, F-38042 Grenoble 9, France

[3] CEA INAC UJF Grenoble1 UMR E, SP2M, CEA CNRS Grp Nanophys & Semicond, F-38042 Grenoble, France

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 03期

关键词：

D O I：

10.1063/1.3618685

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnSe nanowires with CdSe quantum dot insertions were grown by molecular beam epitaxy using gold as a catalyst. Structural, chemical, and optical properties of the wires and quantum dots were characterized using electron microscopy and photoluminescence spectroscopy. We determined the crystalline structure, the chemical composition, and the size of the quantum dot and established a correlation between quantum dot size and luminescence. As expected, a blueshift of the luminescence was observed for decreasing quantum dot size. The comparison of calculated photoluminescence energy and experimental data seems to indicate that the quantum dots consist of a ZnxCd1-xSe ternary alloy rather than pure CdSe. (C) 2011 American Institute of Physics. [doi:10.1063/1.3618685]

引用

页数：9

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