Analysis of a fully matched saturated Doherty amplifier with excellent efficiency

被引：71

作者：

Kim, Jangheon ^{[1
]}

Moon, Junghwan ^{[1
]}

Woo, Young Yuri ^{[2
]}

Hong, Sungchul ^{[2
]}

Kim, Ildu ^{[1
]}

Kim, Jungjoon ^{[1
]}

Kim, Bumman ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Elect Engn, Gyeongbuk 790784, South Korea

[2] Samsung Elect Co Ltd, Telecommun Res & Dev Ctr, Suwon 442742, Gyeonggi, South Korea

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2008年 / 56卷 / 02期

关键词：

Doherty amplifier; efficiency; linearization; power amplifier (PA); wideband code division multiple access (WCDMA);

D O I：

10.1109/TMTT.2007.914361

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A saturated Doherty amplifier based on class-F amplifiers is analyzed in terms of its load modulation behavior, efficiency, and linearity. Simulations included the amplitude ratio and phase difference between the fundamental and third harmonic voltages, the current/voltage waveforms, load lines, and the third-order intermodulation amplitudes/phases of the carrier and peaking amplifiers. The saturated Doherty power amplifier was implemented using two Eudyna EGN010MK GaN HEMTs with a 10-W peak envelope power. For a 2.14-GHz forward-link wideband code-division multiple-access signal, the Doherty amplifier delivers an excellent efficiency of 52.4% with an acceptable linearity of - 28.3 dBc at an average output power of 36 dBm. Moreover, the amplifier can provide the high linearity performance of - 50 dBc using the digital feedback predistortion technique.

引用

页码：328 / 338

页数：11

共 28 条

[1] A high power density TaN/Au T-gate pHEMT with high humidity resistance for Ka-band applications [J].

Amasuga, H ;

Goto, S ;

Shiga, T ;

Totsuka, M ;

Kunii, T ;

Oku, T ;

Ishikawa, T ;

Matsuda, Y .

2005 IEEE MTT-S International Microwave Symposium, Vols 1-4, 2005, :831-834

[2] A low voltage W-CDMA polar transmitter with digital envelope path gain compensation [J].

Chen, Jau-Horng ;

Fedorenko, Pavlo ;

Kenney, J. Stevenson .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2006, 16 (07) :428-430

[3]

Cho KJ, 2007, IEEE MTT S INT MICR, P1576

[4]

Colantonio P, 1999, INT J RF MICROW C E, V9, P129, DOI 10.1002/(SICI)1099-047X(199903)9:2<129::AID-MMCE7>3.0.CO

[5]

2-U

[6]

Cripps S. C, 2002, ADV TECHNIQUES RF PO

[7] A new high efficiency power amplifier for modulated waves [J].

Doherty, WH .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1936, 24 (09) :1163-1182

[8] An extended Doherty amplifier with high efficiency over a wide power range [J].

Iwamoto, M ;

Williams, A ;

Chen, PF ;

Metzger, AG ;

Larson, LE ;

Asbeck, PM .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (12) :2472-2479

[9]

Kenington P.B., 2000, ARTECH MICR, P21

[10]

KIM B, 2001, INT MICR OPT TECHN S, P505

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