The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures

被引：37

作者：

Gladysiewicz, M. ^{[1
]}

Kudrawiec, R. ^{[1
]}

Misiewicz, J. ^{[1
]}

Cywinski, G. ^{[2
]}

Siekacz, M. ^{[2
]}

Wolny, P. ^{[2
]}

Skierbiszewski, C. ^{[2
]}

机构：

[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[2] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 23期

关键词：

2-DIMENSIONAL ELECTRON-GAS; FRANZ-KELDYSH OSCILLATIONS; CONTACTLESS ELECTROREFLECTANCE; SPECTROSCOPY; FIELD; WELL;

D O I：

10.1063/1.3592801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The distribution of electric field in GaN(cap)/AlGaN/GaN(buffer) transistor heterostructures with various AlGaN layer thicknesses (10, 20, and 30 nm) has been studied by contactless electroreflectance and compared with theoretical calculations performed for various positions of the Fermi-level on GaN surface. For the three samples the best agreement between experimental data and theoretical calculations has been found at the same position of the Fermi-level on GaN surface (i.e., 0.55 +/- 0.05 eV below the conduction band). It means that the Fermi-level is pinned on GaN surface and this pinning can be treated as the boundary condition for the distribution of polarization-related fields in this heterostructure. (C) 2011 American Institute of Physics. [doi:10.1063/1.3592801]

引用

页数：3

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